| PART |
Description |
Maker |
| 2N7002BKV |
60 V, 340 mA dual N-channel Trench MOSFET 340 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
NXP Semiconductors N.V.
|
| SKM400GA174D |
540 A, 1700 V, N-CHANNEL IGBT
|
SEMIKRON INTERNATIONAL
|
| PPHR70L60A |
Insulated Gate Bipolar Transistor; Package: TO-254; VCE(sat) (V): 1.6; t(on) (nsec): 115; IC (A): 70; PD (W): 300; E(off) (mJ): 15; Rq: 0.4; Qg(on) (nC): 150; t(off) (nsec): 1700; BV(CES) (V): 600; VGE(th) (V): 3 70 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
|
| CM200DX-34SA |
Dual IGBT NX-Series Module 200 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| CM200EXS-34SA |
Chopper IGBT NX-Series Module 200 Amperes/1700 Volts
|
Powerex Power Semiconductors
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| VWM350-0075P |
MOSFET Modules
Three phase full bridge with Trench MOSFETs 340 A, 75 V, 0.0033 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| FGAF40N60UFTU FGAF40N60UFTUNL |
Ultrafast IGBT; Package: TO-3PF; No of Pins: 3; Container: Rail 40 A, 600 V, N-CHANNEL IGBT
Ultrafast IGBT 40 A, 600 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
| MG800J2YS50A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| SI6821DQ |
1700 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
|
